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Magazine Name : Ieee Transactions On Electron Devices
Year : 2002Volume number : 49Issue:09
Avalanche Phenomena In 4h-Sic P-N Diodes Fabricated By Aluminum Or Boron Implantation(Article) Subject:
Compound Semiconductor Devices
Author:
Y.
Negoro
page:
1505
-
1510
Requirements For Low Intermodulation Distortion In Gan-Alx Ga1-Zn High Electron Mobility Transistors: A Model Assessment(Article) Subject:
Compound Semiconductor Devices
Author:
T
Li
R. R
Joshi
page:
1511
-
1518
A Universal Ion Implantation Model For All Species Into Single-Crystal Silicon(Article) Subject:
Material Processing And Packaging
Author:
Y
Chen
page:
1519
-
1525
Suppression Of Sin-Induced Boron Penetration By Using Sih-Free Silicon Nitride Films Formed By Terachlorosilane And Ammonia(Article) Subject:
Material Processing And Packaging
Author:
Masanori
Tanaka
page:
1526
-
1531
High-Resolution Microencapsulated Electrophoretic Display (Epd) Driven By Poly-Si Tfts With Four-Level Grayscale(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
S
Inoue
page:
1532
-
1539
Dopant Emission Mechanism And The Effects Of Host Materials On The Behavior Of Doped Organic Light-Emitting Diodes(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
H.
Chen
page:
1540
-
1544
Rare-Earth-Doped Gan Switchable Color Electroluminescent Devices(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
J
Heikenfeld
page:
1545
-
1551
Hot-Carrier-Inducedc Degradation In Short P-Channel Nonhydrogenated Polysilicon Thin-Film Transistors(Article) Subject:
Hot Carriers
Author:
Nikolaos
Hastas
page:
1552
-
1557
Channel Engineering For Analog Devices Design In Deep Submicron Cmos Technology For System On Chip Applications(Article) Subject:
Channel Estmation
Author:
V.S.
Deshpande
page:
1558
-
1565
Electron And Hole Mobility Enhancement In Strained Soi By Wafer Bonding(Article) Subject:
Cmos
,
Mobility
Author:
Lijuan
Huang
page:
1566
-
1571
Compositional Design Of Pb(Zr, Ti)O3 For Highly Reliable Ferroelectric Memories(Article) Subject:
Feram
Author:
S
Inoue
page:
1572
-
1579
A Camparison Of Wave-Function Penetration Effect On Gate Capacitance In Deep Submicron N- And P-Mosfets(Article) Subject:
Gate-Controlled -Diode
Author:
M.N.
Haque
page:
1580
-
1587
Hot Carrier Degradation Of The Low-Frequency Noise In Mos Transistors Under Analog And Rf Operating Conditions(Article) Subject:
Noise
Author:
Ralf
Brederlow
page:
1588
-
1596
Ultrathin Gate Oxide Cmos On (111) Surface-Oriented Si Substrate(Article) Subject:
Cmos
Author:
H.
Sasaki
page:
1597
-
1605
Metal Nanocrystal Memories-Part I: Device Design And Fabrication(Article) Subject:
Memories Of Tomorrow
Author:
X.
Liu
page:
1606
-
1613
Metal Nanocrystal Memories -Part Ii: Electrical Characteristics(Article) Subject:
Memories Of Tomorrow
Author:
X.
Liu
page:
1614
-
1622
High-Performance Logic And High-Gain Analog Cmos Transistors Formed By A Shadow -Mask Techniques With A Single Implant Step(Article) Subject:
Analog Integrated Circuits
,
Cmos
Author:
Brian S
Hooker
page:
1623
-
1627
Photocarrier Generaytion In Bipolar Transistors(Article) Subject:
Avalanche Multiplication
Author:
Johan H.
Klootwijk
page:
1628
-
1631
Quasi-Drift Diffusion Model For The Quantum Dot Intermediate Band Solar Cell(Article) Subject:
Multibands
Author:
Savita
Maru
page:
1632
-
1639
Noise Source Medeling For Cyclostationary Noise Analysis In Large-Signal Devices Operation(Article) Subject:
Circuit Noise
Author:
Babrizio
Bonani
page:
1640
-
1647
Characterization Of Hard - And Soft -Switching Performance Of High-Voltage Si And 4h-Sic Pin Diodes(Article) Subject:
Diodes
,
High-Voltage Laboratory
Author:
K
Shenai
page:
1648
-
1656
Theoretical Comparison Of Sic Pin And Schottky Diodes Based On Power Dissipation Considerations(Article) Subject:
Power Electronics
Author:
Dallas T.
Morisette
page:
1657
-
1664
A Monolithic Field Emitter Array With A Jfet(Article) Subject:
Electron Emission
Author:
K
Shima
page:
1665
-
1668
Effects Of Neglecting Carrier Tunneling On Electrostatic Potential In Caculating Direct Tunneling Gate Current In Deep Submicron Mosfets(Article) Subject:
Direct
Author:
Suhayya Abu
Hakima
page:
1669
-
1671